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MJ1200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ1200
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 160 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: SPECIAL
 

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MJ1200 Datasheet (PDF)

 0.1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ1200

isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 0.2. Size:205K  inchange semiconductor
 mj12003.pdf pdf_icon

MJ1200

isc Silicon NPN Power Transistor MJ12003DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.3. Size:204K  inchange semiconductor
 mj12002.pdf pdf_icon

MJ1200

isc Silicon NPN Power Transistor MJ12002DESCRIPTIONHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 1500

 0.4. Size:205K  inchange semiconductor
 mj12005.pdf pdf_icon

MJ1200

isc Silicon NPN Power Transistor MJ12005DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

MOSTRAR MÁS

Otros transistores... MJ11021 , MJ11022 , MJ11028 , MJ11029 , MJ11030 , MJ11031 , MJ11032 , MJ11033 , 2SD313 , MJ12002 , MJ12003 , MJ12004 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 .

History: 2N2202

 

 
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