MJ1200 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ1200
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 160 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hFE): 750
Encapsulados: SPECIAL
Búsqueda de reemplazo de MJ1200
- Selecciónⓘ de transistores por parámetros
MJ1200 datasheet
mj12004.pdf
isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
mj12003.pdf
isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
mj12002.pdf
isc Silicon NPN Power Transistor MJ12002 DESCRIPTION High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 1500
mj12005.pdf
isc Silicon NPN Power Transistor MJ12005 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Otros transistores... MJ11021 , MJ11022 , MJ11028 , MJ11029 , MJ11030 , MJ11031 , MJ11032 , MJ11033 , A1013 , MJ12002 , MJ12003 , MJ12004 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 .
History: BC268B | 40479 | BC231A
History: BC268B | 40479 | BC231A
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