MJ12004 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

MJ12004 Datasheet (PDF)

..1. Size:208K inchange semiconductor
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isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

8.1. Size:205K inchange semiconductor
mj12003.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12003DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.2. Size:204K inchange semiconductor
mj12002.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12002DESCRIPTIONHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 1500

8.3. Size:205K inchange semiconductor
mj12005.pdf pdf_icon

isc Silicon NPN Power Transistor MJ12005DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Otros transistores... MJ11029 , MJ11030 , MJ11031 , MJ11032 , MJ11033 , MJ1200 , MJ12002 , MJ12003 , 8550 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 , MJ12022 , MJ13014 , MJ13015 .