MJ12004 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ12004  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-emisor (Vce): 1500 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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MJ12004 datasheet

 ..1. Size:208K  inchange semiconductor
 mj12004.pdf pdf_icon

MJ12004

isc Silicon NPN Power Transistor MJ12004 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.1. Size:205K  inchange semiconductor
 mj12003.pdf pdf_icon

MJ12004

isc Silicon NPN Power Transistor MJ12003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.2. Size:204K  inchange semiconductor
 mj12002.pdf pdf_icon

MJ12004

isc Silicon NPN Power Transistor MJ12002 DESCRIPTION High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 1500

 8.3. Size:205K  inchange semiconductor
 mj12005.pdf pdf_icon

MJ12004

isc Silicon NPN Power Transistor MJ12005 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 750V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

MOSTRAR MÁS

Otros transistores... MJ11029, MJ11030, MJ11031, MJ11032, MJ11033, MJ1200, MJ12002, MJ12003, 2SC2655, MJ12005, MJ1201, MJ12010, MJ12020, MJ12021, MJ12022, MJ13014, MJ13015