MJ12020 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ12020
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MJ12020
MJ12020 Datasheet (PDF)
mj12020.pdf
isc Silicon NPN Power Transistor MJ12020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25
mj12021.pdf
isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25
mj12022.pdf
isc Silicon NPN Power Transistor MJ12022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25
mj12004.pdf
isc Silicon NPN Power Transistor MJ12004DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
mj12003.pdf
isc Silicon NPN Power Transistor MJ12003DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
mj12002.pdf
isc Silicon NPN Power Transistor MJ12002DESCRIPTIONHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 1500
mj12005.pdf
isc Silicon NPN Power Transistor MJ12005DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 750V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in CRT deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N178
History: 2N178
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050