MJ14000 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJ14000
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 300 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 60 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 2000 pF
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar MJ14000

MJ14000 Datasheet (PDF)

8.1. Size:241K motorola
mj14001r.pdf

Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device

8.2. Size:90K onsemi
mj14003g.pdf

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

8.3. Size:90K onsemi
mj14002g.pdf