MJ150BK100 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ150BK100
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 800 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 1000 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 150 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 100
Encapsulados: X99
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MJ150BK100 datasheet
mj15003r.pdf
Order this document MOTOROLA by MJ15003/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15003* Complementary Silicon Power PNP MJ15004* Transistors The MJ15003 and MJ15004 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 20 AMPERE 250 W @ 50 V POWER TRA
mj15001r.pdf
Order this document MOTOROLA by MJ15001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15001 Complementary Silicon Power PNP MJ15002 Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 15 AMPERE 200 W @ 40 V POWER TRANSISTORS 50 W @ 100 V COMPLEMEN
2n3055a mj2955a mj15015 mj15016.pdf
Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters
mj15011r.pdf
Order this document MOTOROLA by MJ15011/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15011* Advance Information PNP MJ15012* Complementary Silicon Power Transistors *Motorola Preferred Device The MJ15011 and MJ15012 are PowerBase power transistors designed for 10 AMPERE high power audio, disk head positioners, and other linear applications. These devices COMPLEMENTARY can also be used
mj15018r.pdf
Order this document MOTOROLA by MJ15018/D SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 (See 2N3055A) NPN Advance Information MJ15018 Complementary Silicon Power MJ15020* Transistors PNP . . . designed for use as high frequency drivers in Audio Amplifiers. MJ15019 High Gain Complementary Silicon Power Transistors Safe Operating Area 100% Tested MJ15021* 50 V, 3.0 A, 1.
mj15001 mj15002.pdf
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area POWER TRANSISTORS For Low Distortion Complementary Designs COMPLEMENTARY SILICON High DC Current Gain Thes
mj15023 mj15025.pdf
MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area 16 AMPERES High DC Current Gain SILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN) 200 - 250 VOLTS, 250 WATTS T
2n3055a mj15015 mj15016.pdf
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc
mj15022g.pdf
NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Pack
mj15003 mj15004.pdf
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON These
2n3055ag mj15015g mj15016g.pdf
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors http //onsemi.com These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or COMPLEMENTARY SILICON solenoid drivers, dc-to-dc converters, invert
mj15025g.pdf
PNP - MJ15023, MJ15025* *MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Packa
mj15011 mj15012.pdf
MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high-power audio, disk head positioners, and other linear http //onsemi.com applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters or 10 AMPERE inverters. CO
mj15001g.pdf
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. http //onsemi.com Features 20 AMPERE High Safe Operating Area (100% Tested) - 5.0 A @ 40 V 0.5 A @ 100 V POWER TRANSISTORS For Low Distortion Complementary Designs COMPLEMENTARY
mj15024g.pdf
NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Pack
mj15016g.pdf
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc
mj15022 mj15024.pdf
MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS
mj15015g.pdf
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc
mj15004g.pdf
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http //onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary Designs COMPLEMENTARY SIL
mj15003g.pdf
MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http //onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary Designs COMPLEMENTARY SIL
mj15023g.pdf
PNP - MJ15023, MJ15025* *MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Packa
mj15026.pdf
MJ15026 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 High Current Capability High Power Dissipation Complementary to MJ15027 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 16 A Collector
mj15029.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. PINNING PIN DES
mj15028.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. PINNING PIN DESCR
mj15022 mj15024.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Bas
mj15016.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 APPLICATIONS Designed for high power audio, stepping motor and other linear applications, and can als
mj15026.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 APPLICATIONS Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXI
mj15003.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
mj15022 mj15024.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT MJ15022 350 V Collector-Base Voltag
mj15016.pdf
isc Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, step
mj15023 mj15025.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT
mj15012.pdf
isc Silicon PNP Power Transistor MJ15012 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20(Min.)@I = -2A FE C Collector-Emitter Saturation Voltage- V )= -2.5V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head pos
mj15025.pdf
isc Silicon PNP Power Transistors MJ15025 DESCRIPTION Complement to Type NPN MJ15024 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE
mj15004.pdf
isc Silicon PNP Power Transistor MJ15004 DESCRIPTION High DC Current Gain- h = 25(Min)@I = -5A FE C Wide Area of Safe Operation Complement to Type MJ15003 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
mj15024.pdf
isc Silicon NPN Power Transistors MJ15024 DESCRIPTION Complement to Type PNP MJ15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE
mj15011.pdf
isc Silicon NPN Power Transistor MJ15011 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 2.5V(Max)@ I = 4A CE(sat C Complement to the PNP MJ15012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi
mj15026.pdf
isc Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi
mj15002.pdf
isc Silicon PNP Power Transistor MJ15002 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the NPN MJ15001 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
mj15027.pdf
isc Silicon PNP Power Transistor MJ15027 DESCRIPTION High current capability High power dissipation Complement to the NPN MJ15026 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier DC to DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
mj15003.pdf
isc Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
mj15022 mj15024.pdf
isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARA
mj15015.pdf
isc Silicon NPN Power Transistor MJ15015 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = 4A,V = 4V FE C CE Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to the PNP MJ15016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, stepping
mj15001.pdf
isc Silicon NPN Power Transistor MJ15001 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the PNP MJ15002 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
mj15023.pdf
isc Silicon PNP Power Transistors MJ15023 DESCRIPTION Complement to Type NPN MJ15022 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE
Otros transistores... MJ15020 , MJ15021 , MJ15022 , MJ15023 , MJ15024 , MJ15025 , MJ15026 , MJ15027 , 2N5401 , MJ16002 , MJ16002A , MJ16004 , MJ16006 , MJ16006A , MJ16008 , MJ16010 , MJ16010A .
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