MJ150BK100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ150BK100
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 800 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 1000 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 150 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: X99
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MJ150BK100 Datasheet (PDF)
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT
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isc Silicon PNP Power Transistor MJ15004DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = -5AFE CWide Area of Safe OperationComplement to Type MJ15003Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high power audio,disk head positionersand other linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
mj15024.pdf
isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE
mj15011.pdf
isc Silicon NPN Power Transistor MJ15011DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi
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isc Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi
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isc Silicon PNP Power Transistor MJ15002DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the NPN MJ15001100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
mj15027.pdf
isc Silicon PNP Power Transistor MJ15027DESCRIPTIONHigh current capabilityHigh power dissipationComplement to the NPN MJ15026100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifierDC to DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
mj15003.pdf
isc Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
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isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA
mj15015.pdf
isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, stepping
mj15001.pdf
isc Silicon NPN Power Transistor MJ15001DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the PNP MJ15002100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
mj15023.pdf
isc Silicon PNP Power Transistors MJ15023DESCRIPTIONComplement to Type NPN MJ15022Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3038
History: 2N3038
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Recientemente añadidas las descripciónes de los transistores:
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