MJ150BK100 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby MJ15003/DSEMICONDUCTOR TECHNICAL DATANPNMJ15003*Complementary Silicon PowerPNPMJ15004*TransistorsThe MJ15003 and MJ15004 are PowerBase power transist

Order this documentMOTOROLAby MJ15023/DSEMICONDUCTOR TECHNICAL DATAPNPMJ15023MJ15025 *Silicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistors designed for hig

Order this documentMOTOROLAby MJ15001/DSEMICONDUCTOR TECHNICAL DATANPNMJ15001Complementary Silicon PowerPNPMJ15002TransistorsThe MJ15001 and MJ15002 are EpiBase power transistors

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed

Order this documentMOTOROLAby MJ15011/DSEMICONDUCTOR TECHNICAL DATANPNMJ15011*Advance InformationPNPMJ15012*Complementary Silicon PowerTransistors*Motorola Preferred DeviceThe

Order this documentMOTOROLAby MJ15018/DSEMICONDUCTOR TECHNICAL DATAMJ15015, MJ15016(See 2N3055A)NPNAdvance InformationMJ15018Complementary Silicon PowerMJ15020*TransistorsPNP

Order this documentMOTOROLAby MJ15022/DSEMICONDUCTOR TECHNICAL DATANPNMJ15022MJ15024 *Silicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistors designed for hig

MJ15001 (NPN),MJ15002 (PNP)Complementary SiliconPower TransistorsThe MJ15001 and MJ15002 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating AreaPOWER TRANSISTORS For Low Distortion Complementary DesignsCOMPLEMENTARY SILICON High DC Current Gain Thes

MJ15023 (PNP),MJ15025 (PNP)Silicon Power TransistorsThe MJ15023 and MJ15025 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area16 AMPERES High DC Current GainSILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN)200 - 250 VOLTS, 250 WATTS T

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

NPN - MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON These

2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert

PNP - MJ15023, MJ15025**MJ15025 is a Preferred DeviceSilicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Packa

MJ15011 (NPN),MJ15012 (PNP)Preferred DevicesComplementary SiliconPower TransistorsThe MJ15011 and MJ15012 are PowerBase power transistorsdesigned for high-power audio, disk head positioners, and other linearhttp://onsemi.comapplications. These devices can also be used in power switchingcircuits such as relay or solenoid drivers, dc-to-dc converters or 10 AMPEREinverters.CO

MJ15001 (NPN),MJ15002 (PNP)Complementary SiliconPower TransistorsThe MJ15001 and MJ15002 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area (100% Tested) - 5.0 A @ 40 V0.5 A @ 100 VPOWER TRANSISTORS For Low Distortion Complementary DesignsCOMPLEMENTARY

NPN - MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 - 250 VOLTS, 250 WATTS

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL

PNP - MJ15023, MJ15025**MJ15025 is a Preferred DeviceSilicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Packa

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MJ15026 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER TO-3 High Current Capability High Power Dissipation Complementary to MJ15027ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 16 A Collector

Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. PINNING PIN DES

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. PINNING PIN DESCR

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015APPLICATIONSDesigned for high power audio, stepping motor and otherlinear applications, and can als

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027APPLICATIONSDesigned for high power audio, disk head positioners , andother linear applications.ABSOLUTE MAXI

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004APPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag

isc Silicon PNP Power Transistor MJ15016DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = -4A,V = -4VFE C CECollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, step

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT

isc Silicon PNP Power Transistor MJ15012DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = -2AFE CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -4ACE(sat CComplement to the NPN MJ15011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head pos

isc Silicon PNP Power Transistors MJ15025DESCRIPTIONComplement to Type NPN MJ15024Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor MJ15004DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = -5AFE CWide Area of Safe OperationComplement to Type MJ15003Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high power audio,disk head positionersand other linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor MJ15011DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

isc Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

isc Silicon PNP Power Transistor MJ15002DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the NPN MJ15001100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon PNP Power Transistor MJ15027DESCRIPTIONHigh current capabilityHigh power dissipationComplement to the NPN MJ15026100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifierDC to DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor MJ15003DESCRIPTIONHigh DC Current Gain-: h = 25(Min)@I = 5AFE CWide Area of Safe OperationComplement to the PNP MJ15004Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA

isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, stepping

isc Silicon NPN Power Transistor MJ15001DESCRIPTIONHigh DC Current GainWide Area of Safe OperationComplement to the PNP MJ15002100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio,disk head positioners andother linear applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon PNP Power Transistors MJ15023DESCRIPTIONComplement to Type NPN MJ15022Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE