MJ150BK100 Specs and Replacement
Type Designator: MJ150BK100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 800 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 150 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: X99
MJ150BK100 Substitution
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MJ150BK100 datasheet
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SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 APPLICATIONS Designed for high power audio, stepping motor and other linear applications, and can als... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 APPLICATIONS Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXI... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT MJ15022 350 V Collector-Base Voltag... See More ⇒
isc Silicon PNP Power Transistor MJ15016 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = -4A,V = -4V FE C CE Collector-Emitter Saturation Voltage- V )= -1.1 V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, step... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT... See More ⇒
isc Silicon PNP Power Transistor MJ15012 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20(Min.)@I = -2A FE C Collector-Emitter Saturation Voltage- V )= -2.5V(Max)@ I = -4A CE(sat C Complement to the NPN MJ15011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head pos... See More ⇒
isc Silicon PNP Power Transistors MJ15025 DESCRIPTION Complement to Type NPN MJ15024 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE ... See More ⇒
isc Silicon PNP Power Transistor MJ15004 DESCRIPTION High DC Current Gain- h = 25(Min)@I = -5A FE C Wide Area of Safe Operation Complement to Type MJ15003 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
isc Silicon NPN Power Transistors MJ15024 DESCRIPTION Complement to Type PNP MJ15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE ... See More ⇒
isc Silicon NPN Power Transistor MJ15011 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 2.5V(Max)@ I = 4A CE(sat C Complement to the PNP MJ15012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi... See More ⇒
isc Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi... See More ⇒
isc Silicon PNP Power Transistor MJ15002 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the NPN MJ15001 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
isc Silicon PNP Power Transistor MJ15027 DESCRIPTION High current capability High power dissipation Complement to the NPN MJ15026 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier DC to DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
isc Silicon NPN Power Transistor MJ15003 DESCRIPTION High DC Current Gain- h = 25(Min)@I = 5A FE C Wide Area of Safe Operation Complement to the PNP MJ15004 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARA... See More ⇒
isc Silicon NPN Power Transistor MJ15015 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 20-70@I = 4A,V = 4V FE C CE Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to the PNP MJ15016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, stepping... See More ⇒
isc Silicon NPN Power Transistor MJ15001 DESCRIPTION High DC Current Gain Wide Area of Safe Operation Complement to the PNP MJ15002 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
isc Silicon PNP Power Transistors MJ15023 DESCRIPTION Complement to Type NPN MJ15022 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE ... See More ⇒
Detailed specifications: MJ15020 , MJ15021 , MJ15022 , MJ15023 , MJ15024 , MJ15025 , MJ15026 , MJ15027 , 2N5401 , MJ16002 , MJ16002A , MJ16004 , MJ16006 , MJ16006A , MJ16008 , MJ16010 , MJ16010A .
History: CSB631K
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History: CSB631K
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