MJ16006 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ16006  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 850 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 350 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO3

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MJ16006 datasheet

 ..1. Size:206K  inchange semiconductor
 mj16006.pdf pdf_icon

MJ16006

isc Silicon NPN Power Transistor MJ16006 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin

 8.1. Size:207K  inchange semiconductor
 mj16004.pdf pdf_icon

MJ16006

isc Silicon NPN Power Transistor MJ16004 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.2. Size:207K  inchange semiconductor
 mj16008.pdf pdf_icon

MJ16006

isc Silicon NPN Power Transistor MJ16008 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin

 8.3. Size:261K  inchange semiconductor
 mj16002a.pdf pdf_icon

MJ16006

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica

MOSTRAR MÁS

Otros transistores... MJ15024, MJ15025, MJ15026, MJ15027, MJ150BK100, MJ16002, MJ16002A, MJ16004, C5198, MJ16006A, MJ16008, MJ16010, MJ16010A, MJ16012, MJ16014, MJ16016, MJ16018