All Transistors. MJ16006 Datasheet

 

MJ16006 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ16006
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3

 MJ16006 Transistor Equivalent Substitute - Cross-Reference Search

   

MJ16006 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
mj16006.pdf

MJ16006
MJ16006

isc Silicon NPN Power Transistor MJ16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

 8.1. Size:207K  inchange semiconductor
mj16004.pdf

MJ16006
MJ16006

isc Silicon NPN Power Transistor MJ16004DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.2. Size:207K  inchange semiconductor
mj16008.pdf

MJ16006
MJ16006

isc Silicon NPN Power Transistor MJ16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

 8.3. Size:261K  inchange semiconductor
mj16002a.pdf

MJ16006
MJ16006

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica

 8.4. Size:206K  inchange semiconductor
mj16002.pdf

MJ16006
MJ16006

isc Silicon NPN Power Transistor MJ16002DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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