MJ16008. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

MJ16008 datasheet

..1. Size:207K inchange semiconductor
mj16008.pdf pdf_icon

isc Silicon NPN Power Transistor MJ16008 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin

8.1. Size:206K inchange semiconductor
mj16006.pdf pdf_icon

isc Silicon NPN Power Transistor MJ16006 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin

8.2. Size:207K inchange semiconductor
mj16004.pdf pdf_icon

isc Silicon NPN Power Transistor MJ16004 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

8.3. Size:261K inchange semiconductor
mj16002a.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica