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MJ16010 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ16010
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3
 

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MJ16010 Datasheet (PDF)

 ..1. Size:82K  jmnic
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MJ16010

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute

 ..2. Size:206K  inchange semiconductor
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MJ16010

isc Silicon NPN Power Transistor MJ16010DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate

 0.1. Size:548K  motorola
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MJ16010

Order this documentMOTOROLAby MJ16010/DSEMICONDUCTOR TECHNICAL DATAMJ16010Designer's Data SheetMJW16010SWITCHMODE SeriesMJ16012*NPN Silicon Power TransistorsThese transistors are designed for highvoltage, highspeed, power switching inMJW16012*inductive circuits where fall time is critical. They are particularly suited forlineoperated switchmode applications

 8.1. Size:366K  motorola
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MJ16010

Order this documentMOTOROLAby MJ16018/DSEMICONDUCTOR TECHNICAL DATA*MJ16018*MJW16018Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1.5 kV SWITCHMODE Series10 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in 800 VOLTSinductive circuits where fall time is critical. They are par

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