All Transistors. MJ16010 Datasheet

 

MJ16010 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ16010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3

 MJ16010 Transistor Equivalent Substitute - Cross-Reference Search

   

MJ16010 Datasheet (PDF)

 ..1. Size:82K  jmnic
mj16010.pdf

MJ16010
MJ16010

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute

 ..2. Size:206K  inchange semiconductor
mj16010.pdf

MJ16010
MJ16010

isc Silicon NPN Power Transistor MJ16010DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate

 0.1. Size:548K  motorola
mj16010r.pdf

MJ16010
MJ16010

Order this documentMOTOROLAby MJ16010/DSEMICONDUCTOR TECHNICAL DATAMJ16010Designer's Data SheetMJW16010SWITCHMODE SeriesMJ16012*NPN Silicon Power TransistorsThese transistors are designed for highvoltage, highspeed, power switching inMJW16012*inductive circuits where fall time is critical. They are particularly suited forlineoperated switchmode applications

 8.1. Size:366K  motorola
mj16018r.pdf

MJ16010
MJ16010

Order this documentMOTOROLAby MJ16018/DSEMICONDUCTOR TECHNICAL DATA*MJ16018*MJW16018Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1.5 kV SWITCHMODE Series10 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in 800 VOLTSinductive circuits where fall time is critical. They are par

 8.2. Size:113K  savantic
mj16018-1400v.pdf

MJ16010
MJ16010

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ16018 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector

 8.3. Size:207K  inchange semiconductor
mj16018.pdf

MJ16010
MJ16010

isc Silicon NPN Power Transistor MJ16018DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.4. Size:206K  inchange semiconductor
mj16012.pdf

MJ16010
MJ16010

isc Silicon NPN Power Transistor MJ16012DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate

 8.5. Size:211K  inchange semiconductor
mj16016.pdf

MJ16010
MJ16010

isc Silicon NPN Power Transistor MJ16016DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.6. Size:206K  inchange semiconductor
mj16014.pdf

MJ16010
MJ16010

isc Silicon NPN Power Transistor MJ16014DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DD13005_A1 | 3DD31CT4 | 3DA2654

 

 
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