MJ16022 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ16022 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 800 pF
Ganancia de corriente contínua (hFE): 7
Encapsulados: TO3
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MJ16022 datasheet
8.1. Size:168K motorola
mj16020r.pdf 

Order this document MOTOROLA by MJ16020/D SEMICONDUCTOR TECHNICAL DATA MJ16020 MJ16022 Advance Information SWITCHMODE Series NPN SILICON POWER NPN Silicon Power Transistors TRANSISTOR 30 AMPERES These transistors are designed for high voltage, high speed, power switching in 450 VOLTS inductive circuits where fall time is critical. They are particularly suited for line opera
9.1. Size:548K motorola
mj16010r.pdf 

Order this document MOTOROLA by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series MJ16012* NPN Silicon Power Transistors These transistors are designed for high voltage, high speed, power switching in MJW16012* inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications
9.2. Size:366K motorola
mj16018r.pdf 

Order this document MOTOROLA by MJ16018/D SEMICONDUCTOR TECHNICAL DATA * MJ16018 * MJW16018 Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1.5 kV SWITCHMODE Series 10 AMPERES These transistors are designed for high voltage, high speed, power switching in 800 VOLTS inductive circuits where fall time is critical. They are par
9.3. Size:113K savantic
mj16018-1400v.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ16018 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector
9.4. Size:82K jmnic
mj16010.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute
9.5. Size:206K inchange semiconductor
mj16006.pdf 

isc Silicon NPN Power Transistor MJ16006 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin
9.6. Size:207K inchange semiconductor
mj16004.pdf 

isc Silicon NPN Power Transistor MJ16004 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
9.7. Size:207K inchange semiconductor
mj16018.pdf 

isc Silicon NPN Power Transistor MJ16018 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
9.8. Size:206K inchange semiconductor
mj16012.pdf 

isc Silicon NPN Power Transistor MJ16012 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate
9.9. Size:206K inchange semiconductor
mj16010.pdf 

isc Silicon NPN Power Transistor MJ16010 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. It is particularly suited for line-operate
9.10. Size:211K inchange semiconductor
mj16016.pdf 

isc Silicon NPN Power Transistor MJ16016 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
9.11. Size:206K inchange semiconductor
mj16014.pdf 

isc Silicon NPN Power Transistor MJ16014 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line
9.12. Size:207K inchange semiconductor
mj16008.pdf 

isc Silicon NPN Power Transistor MJ16008 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin
9.13. Size:261K inchange semiconductor
mj16002a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica
9.14. Size:206K inchange semiconductor
mj16002.pdf 

isc Silicon NPN Power Transistor MJ16002 DESCRIPTION Fast turn-off times Operating temperature range -65 200 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
Otros transistores... MJ16008, MJ16010, MJ16010A, MJ16012, MJ16014, MJ16016, MJ16018, MJ16020, BC557, MJ16110, MJ1800, MJ200AA55, MJ21193, MJ21194, MJ2249, MJ2250, MJ2251