Order this documentMOTOROLAby MJ16020/DSEMICONDUCTOR TECHNICAL DATAMJ16020MJ16022Advance InformationSWITCHMODE SeriesNPN SILICON POWERNPN Silicon Power TransistorsTRANSISTOR30 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in450 VOLTSinductive circuits where fall time is critical. They are particularly suited forlineopera

Order this documentMOTOROLAby MJ16010/DSEMICONDUCTOR TECHNICAL DATAMJ16010Designer's Data SheetMJW16010SWITCHMODE SeriesMJ16012*NPN Silicon Power TransistorsThese transistors are designed for highvoltage, highspeed, power switching inMJW16012*inductive circuits where fall time is critical. They are particularly suited forlineoperated switchmode applications

Order this documentMOTOROLAby MJ16018/DSEMICONDUCTOR TECHNICAL DATA*MJ16018*MJW16018Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1.5 kV SWITCHMODE Series10 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in 800 VOLTSinductive circuits where fall time is critical. They are par

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ16018 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ16010 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute

isc Silicon NPN Power Transistor MJ16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

isc Silicon NPN Power Transistor MJ16004DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor MJ16018DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor MJ16012DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate

isc Silicon NPN Power Transistor MJ16010DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critical. It is particularlysuited for line-operate

isc Silicon NPN Power Transistor MJ16016DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor MJ16014DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

isc Silicon NPN Power Transistor MJ16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line-operated switchmode applica

isc Silicon NPN Power Transistor MJ16002DESCRIPTIONFast turn-off timesOperating temperature range -65~200100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB