MJ21193
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: MJ21193
   Material: Si
   Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
   Disipación total del dispositivo (Pc): 250
 W
   Tensión colector-base (Vcb): 400
 V
   Tensión colector-emisor (Vce): 250
 V
   Tensión emisor-base (Veb): 5
 V
   Corriente del colector DC máxima (Ic): 16
 A
   Temperatura operativa máxima (Tj): 200
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Ganancia de corriente contínua (hfe): 75
		   Paquete / Cubierta: 
TO3
				
				  
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MJ21193
 Datasheet (PDF)
 ..1.  Size:122K  onsemi
 mj21193 mj21194.pdf 
						 
MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin
 ..2.  Size:167K  cn sptech
 mj21193.pdf 
						 
SPTECH Product SpecificationSilicon PNP Power Transistor MJ21193DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = -8A,V =-5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.4 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21194APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSO
 ..3.  Size:201K  inchange semiconductor
 mj21193.pdf 
						 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
 0.1.  Size:173K  motorola
 mj21193r.pdf 
						 
Order this documentMOTOROLAby MJ21193/DSEMICONDUCTOR TECHNICAL DATAPNP*MJ21193NPNSilicon Power Transistors*MJ21194The MJ21193 and MJ21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications.16 AMPERECOMPLEMENTARY Total Harmonic Distortion Charac
 0.2.  Size:153K  onsemi
 mj21193g.pdf 
						 
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
 8.1.  Size:153K  onsemi
 mj21194g.pdf 
						 
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
 8.2.  Size:125K  onsemi
 mj21195g mj21196g.pdf 
						 
MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle
 8.3.  Size:94K  onsemi
 mj21195-96.pdf 
						 
ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain  SILICON 
 8.4.  Size:83K  onsemi
 mj21196g.pdf 
						 
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
 8.5.  Size:82K  onsemi
 mj21195 mj21196.pdf 
						 
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
 8.6.  Size:83K  onsemi
 mj21195g.pdf 
						 
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
 8.7.  Size:167K  cn sptech
 mj21194.pdf 
						 
SPTECH Product SpecificationSilicon NPN Power Transistor MJ21194DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4 V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21193APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSOLUT
 8.8.  Size:201K  inchange semiconductor
 mj21194.pdf 
						 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
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History: 2SD1695
 | 2SD1236
 | 2N2196A