MJ21193 Todos los transistores

MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin

SPTECH Product Specification Silicon PNP Power Transistor MJ21193 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25-75@I = -8A,V =-5V FE C CE Collector-Emitter Saturation Voltage- V )= -1.4 V(Max)@ I = -8A CE(sat C Complement to the NPN MJ21194 APPLICATIONS Designed for high power audio output, disk head positioners and other linear applications. ABSO

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONS Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Em

Order this document MOTOROLA by MJ21193/D SEMICONDUCTOR TECHNICAL DATA PNP * MJ21193 NPN Silicon Power Transistors * MJ21194 The MJ21193 and MJ21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Charac

MJ21193, MJ21194 Preferred Device Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 AMP COMPLEMENTARY

MJ21193, MJ21194 Preferred Device Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 AMP COMPLEMENTARY

MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain POWER TRANSISTORS Excelle

ON Semiconductort PNP * MJ21195 Silicon Power Transistors NPN * MJ21196 The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. 16 AMPERE Total Harmonic Distortion Characterized COMPLEMENTARY High DC Current Gain SILICON

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

SPTECH Product Specification Silicon NPN Power Transistor MJ21194 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25-75@I = 8A,V = 5V FE C CE Collector-Emitter Saturation Voltage- V )= 1.4 V(Max)@ I = 8A CE(sat C Complement to the PNP MJ21193 APPLICATIONS Designed for high power audio output, disk head positioners and other linear applications. ABSOLUT

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONS Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Em