MJ21193
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ21193
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 250
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 16
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ21193
MJ21193
Datasheet (PDF)
..1. Size:122K onsemi
mj21193 mj21194.pdf 
MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin
..2. Size:167K cn sptech
mj21193.pdf
SPTECH Product SpecificationSilicon PNP Power Transistor MJ21193DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = -8A,V =-5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.4 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21194APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSO
..3. Size:201K inchange semiconductor
mj21193.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
0.1. Size:173K motorola
mj21193r.pdf
Order this documentMOTOROLAby MJ21193/DSEMICONDUCTOR TECHNICAL DATAPNP*MJ21193NPNSilicon Power Transistors*MJ21194The MJ21193 and MJ21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications.16 AMPERECOMPLEMENTARY Total Harmonic Distortion Charac
0.2. Size:153K onsemi
mj21193g.pdf
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
8.1. Size:153K onsemi
mj21194g.pdf
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
8.2. Size:125K onsemi
mj21195g mj21196g.pdf
MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle
8.3. Size:94K onsemi
mj21195-96.pdf
ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain SILICON
8.4. Size:83K onsemi
mj21196g.pdf
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
8.5. Size:82K onsemi
mj21195 mj21196.pdf
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
8.6. Size:83K onsemi
mj21195g.pdf
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
8.7. Size:167K cn sptech
mj21194.pdf
SPTECH Product SpecificationSilicon NPN Power Transistor MJ21194DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4 V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21193APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSOLUT
8.8. Size:201K inchange semiconductor
mj21194.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
Otros transistores... 2N3200
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