Биполярный транзистор MJ21193 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ21193
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 250 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 16 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: TO3
MJ21193 Datasheet (PDF)
mj21193 mj21194.pdf
MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin
mj21193.pdf
SPTECH Product SpecificationSilicon PNP Power Transistor MJ21193DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = -8A,V =-5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.4 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21194APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSO
mj21193.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
mj21193r.pdf
Order this documentMOTOROLAby MJ21193/DSEMICONDUCTOR TECHNICAL DATAPNP*MJ21193NPNSilicon Power Transistors*MJ21194The MJ21193 and MJ21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications.16 AMPERECOMPLEMENTARY Total Harmonic Distortion Charac
mj21193g.pdf
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
mj21194g.pdf
MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY
mj21195g mj21196g.pdf
MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle
mj21195-96.pdf
ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain SILICON
mj21196g.pdf
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
mj21195 mj21196.pdf
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
mj21195g.pdf
MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @
mj21194.pdf
SPTECH Product SpecificationSilicon NPN Power Transistor MJ21194DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = 8A,V = 5VFE C CECollector-Emitter Saturation Voltage-: V )= 1.4 V(Max)@ I = 8ACE(sat CComplement to the PNP MJ21193APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSOLUT
mj21194.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050