MJ2500 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Darlingtion Power Transistor MJ2500DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I = -5AFE CCollector-Emitter Breakdown Voltage-V = -60V(Min)(BR)CEOComplement to the NPN MJ3000Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices

Order this documentMOTOROLAby MJ2500/DSEMICONDUCTOR TECHNICAL DATAMJ2955 (See 2N3055)MJ2955A(See 2N3055A)Medium-Power ComplementaryPNPSilicon Transistors MJ2500. . . for use as output devices in complementary general purpose amplifier applica-*MJ2501tions.NPN High DC Current Gain hFE = 4000 (Typ) @ IC = 5.0 Adc Monolithic Construction with Builtin Ba

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitMJ2500 6

MJ2501MJ3001COMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJ2501 is a silicon epitaxial-base PNPpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary NPN type is the MJ3001.2TO-3INTERNA

isc Silicon PNP Darlingtion Power Transistor MJ2501DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I = -5AFE CCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral purpo