MJ2500 - описание и поиск аналогов

isc Silicon PNP Darlingtion Power Transistor MJ2500 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I = -5A FE C Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Complement to the NPN MJ3000 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices

Order this document MOTOROLA by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary PNP Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applica- * MJ2501 tions. NPN High DC Current Gain hFE = 4000 (Typ) @ IC = 5.0 Adc Monolithic Construction with Built in Ba

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ2500 6

MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary NPN type is the MJ3001. 2 TO-3 INTERNA

isc Silicon PNP Darlingtion Power Transistor MJ2501 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I = -5A FE C Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general purpo