MJ3000 Todos los transistores

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ3000/3001 DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) an

isc Silicon NPN Darlingtion Power Transistor MJ3000 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain h = 1000 (Min) @ I = 5A FE C Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Complement to PNP type MJ2500 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ2500 6

MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary NPN type is the MJ3001. 2 TO-3 INTERNA