Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ3000/3001 DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an

isc Silicon NPN Darlingtion Power Transistor MJ3000DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gainh = 1000 (Min) @ I = 5AFE CCollector-Emitter Breakdown VoltageV = 60V(Min)(BR)CEOComplement to PNP type MJ2500Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitMJ2500 6

MJ2501MJ3001COMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJ2501 is a silicon epitaxial-base PNPpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary NPN type is the MJ3001.2TO-3INTERNA