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MJ3001 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ3001
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO3
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MJ3001 Datasheet (PDF)

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MJ3001

MJ2501MJ3001COMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJ2501 is a silicon epitaxial-base PNPpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary NPN type is the MJ3001.2TO-3INTERNA

 0.1. Size:168K  comset
mj2500-mj2501-mj3000-mj3001.pdf pdf_icon

MJ3001

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitMJ2500 6

 9.1. Size:116K  inchange semiconductor
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MJ3001

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ3000/3001 DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an

 9.2. Size:206K  inchange semiconductor
mj3000.pdf pdf_icon

MJ3001

isc Silicon NPN Darlingtion Power Transistor MJ3000DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gainh = 1000 (Min) @ I = 5AFE CCollector-Emitter Breakdown VoltageV = 60V(Min)(BR)CEOComplement to PNP type MJ2500Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6208 | DTB113ZS | 2SC3210 | STD123S | 2SB806-KR | BCX5216TA | HN4B06J

 

 
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