Биполярный транзистор MJ3001 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ3001
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 2000
Корпус транзистора: TO3
MJ3001 Datasheet (PDF)
mj2501 mj3001.pdf
MJ2501MJ3001COMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJ2501 is a silicon epitaxial-base PNPpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary NPN type is the MJ3001.2TO-3INTERNA
mj2500-mj2501-mj3000-mj3001.pdf
COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitMJ2500 6
mj3000 3001.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ3000/3001 DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an
mj3000.pdf
isc Silicon NPN Darlingtion Power Transistor MJ3000DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gainh = 1000 (Min) @ I = 5AFE CCollector-Emitter Breakdown VoltageV = 60V(Min)(BR)CEOComplement to PNP type MJ2500Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2076
History: 2N2076
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050