MJ3040 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ3040

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO3

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MJ3040 datasheet

 ..1. Size:195K  inchange semiconductor
 mj3040.pdf pdf_icon

MJ3040

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE

 9.1. Size:195K  inchange semiconductor
 mj3042.pdf pdf_icon

MJ3040

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE

 9.2. Size:207K  inchange semiconductor
 mj3041.pdf pdf_icon

MJ3040

isc Silicon NPN Darlington Power Transistor MJ3041 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated amplifier series pass and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

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