MJ3040 Specs and Replacement
Type Designator: MJ3040
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
MJ3040 Substitution
MJ3040 datasheet
mj3040.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE... See More ⇒
mj3042.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE... See More ⇒
mj3041.pdf
isc Silicon NPN Darlington Power Transistor MJ3041 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated amplifier series pass and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: MJ3001 , MJ3010 , MJ3011 , MJ3026 , MJ3027 , MJ3028 , MJ3029 , MJ3030 , S9013 , MJ3041 , MJ3042 , MJ3101 , MJ3201 , MJ3202 , MJ3237 , MJ3238 , MJ3248 .
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