MJ3042 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ3042

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 350 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 250

Encapsulados: TO3

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MJ3042 datasheet

 ..1. Size:195K  inchange semiconductor
 mj3042.pdf pdf_icon

MJ3042

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE

 9.1. Size:207K  inchange semiconductor
 mj3041.pdf pdf_icon

MJ3042

isc Silicon NPN Darlington Power Transistor MJ3041 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated amplifier series pass and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 9.2. Size:195K  inchange semiconductor
 mj3040.pdf pdf_icon

MJ3042

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE

Otros transistores... MJ3011, MJ3026, MJ3027, MJ3028, MJ3029, MJ3030, MJ3040, MJ3041, D880, MJ3101, MJ3201, MJ3202, MJ3237, MJ3238, MJ3248, MJ3260, MJ3274