MJ3042 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ3042
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 350 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: TO3
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MJ3042 Datasheet (PDF)
mj3042.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONSDeveloped for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE
mj3041.pdf

isc Silicon NPN Darlington Power Transistor MJ3041DESCRIPTIONHigh DC Current GainLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated amplifier series passand switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
mj3040.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONSDeveloped for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KRA742E | BC232B | 2N964 | 2SD468C | 2SC1103A | DTC115EM3T5G | 2SC3443
History: KRA742E | BC232B | 2N964 | 2SD468C | 2SC1103A | DTC115EM3T5G | 2SC3443



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