MJ3042 Specs and Replacement

Type Designator: MJ3042

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO3

 MJ3042 Substitution

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MJ3042 datasheet

 ..1. Size:195K  inchange semiconductor

 mj3042.pdf pdf_icon

MJ3042

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE... See More ⇒

 9.1. Size:207K  inchange semiconductor

 mj3041.pdf pdf_icon

MJ3042

isc Silicon NPN Darlington Power Transistor MJ3041 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated amplifier series pass and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

 9.2. Size:195K  inchange semiconductor

 mj3040.pdf pdf_icon

MJ3042

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE... See More ⇒

Detailed specifications: MJ3011, MJ3026, MJ3027, MJ3028, MJ3029, MJ3030, MJ3040, MJ3041, D880, MJ3101, MJ3201, MJ3202, MJ3237, MJ3238, MJ3248, MJ3260, MJ3274

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