MJ3042 Datasheet and Replacement
Type Designator: MJ3042
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO3
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MJ3042 Datasheet (PDF)
mj3042.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONSDeveloped for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE
mj3041.pdf

isc Silicon NPN Darlington Power Transistor MJ3041DESCRIPTIONHigh DC Current GainLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated amplifier series passand switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
mj3040.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONSDeveloped for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KTB2510 | 2SA3802 | D29E2 | BC266B | BDS28A | ECG343 | 2N334A
Keywords - MJ3042 transistor datasheet
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History: KTB2510 | 2SA3802 | D29E2 | BC266B | BDS28A | ECG343 | 2N334A



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