MJ3771 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ3771

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 30 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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MJ3771 datasheet

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 mj3771.pdf pdf_icon

MJ3771

isc Silicon NPN Power Transistor MJ3771 DESCRIPTION High DC Current Gain Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO

 9.1. Size:200K  inchange semiconductor
 mj3772.pdf pdf_icon

MJ3771

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas

 9.2. Size:200K  inchange semiconductor
 mj3773.pdf pdf_icon

MJ3771

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas

Otros transistores... MJ3583, MJ3584, MJ3585, MJ3701, MJ3738, MJ3739, MJ3760, MJ3761, 2SC828, MJ3772, MJ3773, MJ3801, MJ3802, MJ400, MJ4000, MJ4001, MJ4010