MJ3771 Datasheet and Replacement
Type Designator: MJ3771
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
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MJ3771 Datasheet (PDF)
mj3771.pdf

isc Silicon NPN Power Transistor MJ3771DESCRIPTIONHigh DC Current GainWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO
mj3772.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas
mj3773.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BTB772ST3 | 2SD218 | KSC5367 | 2SC1815LG | TIP31G | BC239CP | TIP31A
Keywords - MJ3771 transistor datasheet
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History: BTB772ST3 | 2SD218 | KSC5367 | 2SC1815LG | TIP31G | BC239CP | TIP31A



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