All Transistors. MJ3771 Datasheet

 

MJ3771 Datasheet and Replacement


   Type Designator: MJ3771
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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MJ3771 Datasheet (PDF)

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MJ3771

isc Silicon NPN Power Transistor MJ3771DESCRIPTIONHigh DC Current GainWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO

 9.1. Size:200K  inchange semiconductor
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MJ3771

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas

 9.2. Size:200K  inchange semiconductor
 mj3773.pdf pdf_icon

MJ3771

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas

Datasheet: MJ3583 , MJ3584 , MJ3585 , MJ3701 , MJ3738 , MJ3739 , MJ3760 , MJ3761 , B647 , MJ3772 , MJ3773 , MJ3801 , MJ3802 , MJ400 , MJ4000 , MJ4001 , MJ4010 .

History: KRA303 | UN521N | BFS19 | DTC023JEB | FMW6 | DTA123YN3 | 2SD1254

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