MJ3772 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ3772

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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MJ3772 datasheet

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 mj3772.pdf pdf_icon

MJ3772

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas

 9.1. Size:200K  inchange semiconductor
 mj3773.pdf pdf_icon

MJ3772

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas

 9.2. Size:204K  inchange semiconductor
 mj3771.pdf pdf_icon

MJ3772

isc Silicon NPN Power Transistor MJ3771 DESCRIPTION High DC Current Gain Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO

Otros transistores... MJ3584, MJ3585, MJ3701, MJ3738, MJ3739, MJ3760, MJ3761, MJ3771, 431, MJ3773, MJ3801, MJ3802, MJ400, MJ4000, MJ4001, MJ4010, MJ4011