MJ3772 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ3772
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MJ3772
MJ3772 Datasheet (PDF)
mj3772.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas
mj3773.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONSDesigned for power amplifier and switching applications. For ultimate circuit performance bas
mj3771.pdf

isc Silicon NPN Power Transistor MJ3771DESCRIPTIONHigh DC Current GainWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBO
Otros transistores... MJ3584 , MJ3585 , MJ3701 , MJ3738 , MJ3739 , MJ3760 , MJ3761 , MJ3771 , TIP32C , MJ3773 , MJ3801 , MJ3802 , MJ400 , MJ4000 , MJ4001 , MJ4010 , MJ4011 .
History: 2SC5409 | SQ3960F | HA22 | LMBTH10LT3G | BC107AP | SML5001
History: 2SC5409 | SQ3960F | HA22 | LMBTH10LT3G | BC107AP | SML5001



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