MJ3772 Specs and Replacement
Type Designator: MJ3772
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
MJ3772 Substitution
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MJ3772 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@100V High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3773 DESCRIPTION Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A Low Leakage - Icbo=1mA(max)@140V High Current-Gain-Bandwidth Product- fT=1MHz(min)@Ic=1A APPLICATIONS Designed for power amplifier and switching applications. For ultimate circuit performance bas... See More ⇒
isc Silicon NPN Power Transistor MJ3771 DESCRIPTION High DC Current Gain Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO... See More ⇒
Detailed specifications: MJ3584, MJ3585, MJ3701, MJ3738, MJ3739, MJ3760, MJ3761, MJ3771, 431, MJ3773, MJ3801, MJ3802, MJ400, MJ4000, MJ4001, MJ4010, MJ4011
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History: KTC2078 | KTC200
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