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MJ8500 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ8500
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1200 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 2.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 205 pF
   Ganancia de corriente contínua (hfe): 7.5
   Paquete / Cubierta: TO3
 

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MJ8500 Datasheet (PDF)

 ..1. Size:170K  inchange semiconductor
mj8500.pdf pdf_icon

MJ8500

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.1. Size:207K  inchange semiconductor
mj8504.pdf pdf_icon

MJ8500

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 9.2. Size:170K  inchange semiconductor
mj8501.pdf pdf_icon

MJ8500

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:207K  inchange semiconductor
mj8505.pdf pdf_icon

MJ8500

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

Otros transistores... MJ7200 , MJ7201 , MJ7260 , MJ7261 , MJ802 , MJ8100 , MJ8101 , MJ8400 , 8550 , MJ8501 , MJ8502 , MJ8503 , MJ8504 , MJ8505 , MJ900 , MJ9000 , MJ901 .

History: PBRN113ET | MJE721 | 2SB1016O | KTB817B | ECG235 | 2SC3203 | 2SC2613K

 

 
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