All Transistors. MJ8500 Datasheet

 

MJ8500 Datasheet and Replacement


   Type Designator: MJ8500
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 205 pF
   Forward Current Transfer Ratio (hFE), MIN: 7.5
   Noise Figure, dB: -
   Package: TO3
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MJ8500 Datasheet (PDF)

 ..1. Size:170K  inchange semiconductor
mj8500.pdf pdf_icon

MJ8500

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.1. Size:207K  inchange semiconductor
mj8504.pdf pdf_icon

MJ8500

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 9.2. Size:170K  inchange semiconductor
mj8501.pdf pdf_icon

MJ8500

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:207K  inchange semiconductor
mj8505.pdf pdf_icon

MJ8500

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ACY32-5 | MRF5812 | 2N144-13 | MCH6103 | RT1N440S | MCH3245 | 2SC2065

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