MJ8501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ8501
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 1400 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 7.5
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MJ8501
MJ8501 Datasheet (PDF)
mj8501.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
mj8504.pdf

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
mj8500.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
mj8505.pdf

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
Otros transistores... MJ7201 , MJ7260 , MJ7261 , MJ802 , MJ8100 , MJ8101 , MJ8400 , MJ8500 , 2SD669A , MJ8502 , MJ8503 , MJ8504 , MJ8505 , MJ900 , MJ9000 , MJ901 , MJ920 .
History: KSA1182O | ST2SB1386U | ECG249 | 2SC1403A | BFY95 | NR041F | 2N1839A
History: KSA1182O | ST2SB1386U | ECG249 | 2SC1403A | BFY95 | NR041F | 2N1839A



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet