MJ8501 Todos los transistores

 

MJ8501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ8501
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1400 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 2.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 250 pF
   Ganancia de corriente contínua (hfe): 7.5
   Paquete / Cubierta: TO3
 

 Búsqueda de reemplazo de MJ8501

   - Selección ⓘ de transistores por parámetros

 

MJ8501 Datasheet (PDF)

 ..1. Size:170K  inchange semiconductor
mj8501.pdf pdf_icon

MJ8501

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.1. Size:207K  inchange semiconductor
mj8504.pdf pdf_icon

MJ8501

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 9.2. Size:170K  inchange semiconductor
mj8500.pdf pdf_icon

MJ8501

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:207K  inchange semiconductor
mj8505.pdf pdf_icon

MJ8501

isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

Otros transistores... MJ7201 , MJ7260 , MJ7261 , MJ802 , MJ8100 , MJ8101 , MJ8400 , MJ8500 , 2SD669A , MJ8502 , MJ8503 , MJ8504 , MJ8505 , MJ900 , MJ9000 , MJ901 , MJ920 .

History: KSA1182O | ST2SB1386U | ECG249 | 2SC1403A | BFY95 | NR041F | 2N1839A

 

 
Back to Top

 


 
.