MJ8501. Аналоги и основные параметры

Наименование производителя: MJ8501

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 125 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1400 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 2.5 A

Предельная температура PN-перехода (Tj): 200 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 250 pf

Статический коэффициент передачи тока (hFE): 7.5

Корпус транзистора: TO3

 Аналоги (замена) для MJ8501

- подборⓘ биполярного транзистора по параметрам

 

MJ8501 даташит

 ..1. Size:170K  inchange semiconductor
 mj8501.pdf pdf_icon

MJ8501

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.1. Size:207K  inchange semiconductor
 mj8504.pdf pdf_icon

MJ8501

isc Silicon NPN Power Transistor MJ8504 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 9.2. Size:170K  inchange semiconductor
 mj8500.pdf pdf_icon

MJ8501

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:207K  inchange semiconductor
 mj8505.pdf pdf_icon

MJ8501

isc Silicon NPN Power Transistor MJ8505 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJ7201, MJ7260, MJ7261, MJ802, MJ8100, MJ8101, MJ8400, MJ8500, D880, MJ8502, MJ8503, MJ8504, MJ8505, MJ900, MJ9000, MJ901, MJ920