MJD112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJD112
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 25 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 6000
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de transistor bipolar MJD112

MJD112 Datasheet (PDF)

..1. Size:306K motorola
mjd112 mjd117.pdf

Order this documentMOTOROLAby MJD112/DSEMICONDUCTOR TECHNICAL DATANPN*MJD112Complementary DarlingtonPNPMJD117*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, converters, and power amplifiers.POWER TRANS

..2. Size:84K st
mjd112 mjd117.pdf

MJD112MJD117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP112 AND1TIP117APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIERTO-252(Suffix

..3. Size:152K fairchild semi
mjd112.pdf

November 2006MJD112tmNPN Silicon Darlington TransistorFeatures High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Equivalent CircuitCBD-PAK1R1 R2 1.Base 2.Collector 3.EmitterER1 10kR2 0.6kAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value Units VC

..4. Size:84K cdil
mjd112 mjd117.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPNMJD117 PNPDPAK (TO-252)Plastic PackageDesigned for General Purpose Power and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCBO 100Collector Base Voltage VVCEO 100Collector Emitter Voltage VE

..5. Size:394K kec
mjd112 l.pdf

SEMICONDUCTOR MJD112/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.AI C JFEATURESDIM MILLIMETERSHigh DC Current Gain. _A 6.60 + 0.2_B 6.10 + 0.2: hFE=1000(Min.), VCE=4V, IC=1A._C 5.0 + 0.2_D 1.10 + 0.2Low Collector-Emitter Saturation Voltage._E 2.70 + 0.2_F 2.30 + 0

..6. Size:184K lge
mjd112.pdf

MJD112(NPN)TO-251/TO-525-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO 100 VCollector-Base Voltage VCEO 100 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage

0.1. Size:153K onsemi
njvmjd112 njvmjd117.pdf

MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

0.2. Size:224K onsemi
mjd112rlg.pdf

MJD112,NJVMJD112T4G (NPN),MJD117,NJVMJD117T4G (PNP)Complementary Darlingtonhttp://onsemi.comPower TransistorsSILICONDPAK For Surface Mount ApplicationsPOWER TRANSISTORSDesigned for general purpose power and switching such as output or2 AMPERESdriver stages in applications such as switching regulators, converters,100 VOLTS, 20 WATTSand power amplifiers.Features

0.3. Size:224K onsemi
mjd112t4g.pdf