MJD127T4 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD127T4

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 6000

Encapsulados: TO252

 Búsqueda de reemplazo de MJD127T4

- Selecciónⓘ de transistores por parámetros

 

MJD127T4 datasheet

 0.1. Size:205K  onsemi
 mjd127t4g.pdf pdf_icon

MJD127T4

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

 8.1. Size:284K  motorola
 mjd122re mjd127.pdf pdf_icon

MJD127T4

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS

 8.2. Size:93K  st
 mjd122 mjd127.pdf pdf_icon

MJD127T4

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix

 8.3. Size:205K  onsemi
 mjd127g.pdf pdf_icon

MJD127T4

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

MOSTRAR MÁS

Otros transistores... MJD117, MJD117-1, MJD117T4, MJD122, MJD122-1, MJD122T4, MJD127, MJD127-1, 2SC828, MJD13003, MJD148, MJD200, MJD200-1, MJD210, MJD210-1, MJD210T4, MJD243