All Transistors. MJD127T4 Datasheet

 

MJD127T4 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJD127T4

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 6000

Noise Figure, dB: -

Package: TO252

MJD127T4 Transistor Equivalent Substitute - Cross-Reference Search

 

MJD127T4 Datasheet (PDF)

4.1. mjd122re mjd127.pdf Size:284K _motorola

MJD127T4
MJD127T4

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS S

4.2. mjd122 mjd127.pdf Size:93K _st

MJD127T4
MJD127T4

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix T4)

4.3. njvmjd122 njvmjd127.pdf Size:142K _onsemi

MJD127T4
MJD127T4

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements

4.4. mjd127.pdf Size:201K _lge

MJD127T4
MJD127T4

MJD127(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base V

Datasheet: MJD117 , MJD117-1 , MJD117T4 , MJD122 , MJD122-1 , MJD122T4 , MJD127 , MJD127-1 , 2SC2078 , MJD13003 , MJD148 , MJD200 , MJD200-1 , MJD210 , MJD210-1 , MJD210T4 , MJD243 .

 


MJD127T4
  MJD127T4
  MJD127T4
 

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