MJD13003
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD13003
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15
W
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Capacitancia de salida (Cc): 21
pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta:
TO251
Búsqueda de reemplazo de transistor bipolar MJD13003
MJD13003
Datasheet (PDF)
..1. Size:591K cdil
mjd13003.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTOR MJD13003DPAK (TO-252)Plastic PackageDesigned for High Voltage, High Speed Power Switching Inductive Circuits ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 400 VCollector Emitter Voltage VCEV 700 VEmit
..2. Size:767K kexin
mjd13003.pdf
SMD Type TransistorsNPN TransistorsMJD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
..3. Size:235K inchange semiconductor
mjd13003.pdf
isc Silicon NPN Power Transistor MJD13003DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulato
7.1. Size:1188K kexin
mjd13001.pdf
SMD Type TransistorsNPN TransistorsMJD13001SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 Power switching applications1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emitter - Base
7.2. Size:1384K kexin
mjd13002.pdf
SMD Type TransistorsNPN TransistorsMJD13002SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Power Switching Applications1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitter - B
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
