MJD200 Todos los transistores

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 mjd200 mjd210.pdf

MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, DPAK audio amplifier applications. TO-252 Th

 ..2. Size:142K  onsemi
 njvmjd210 mjd200.pdf

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES High DC Current Gain 25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix

 ..3. Size:242K  onsemi
 mjd200 mjd210.pdf

Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications MJD200 (NPN), MJD210 (PNP) www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. SILICON POWER TRANSISTORS Features High DC Current Gain 5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves 25 VOLTS, 12.5 WATTS (No Suffix)

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 mjd200.pdf

isc Silicon NPN Power Transistor MJD200 DESCRIPTION DC Current Gain- h = 70(Min) @ I = 0.5A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJD210 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low-current, high-speed switching a

 0.1. Size:236K  motorola
 mjd200re mjd210.pdf

Order this document MOTOROLA by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 Complementary PNP Plastic Power Transistors MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Collector Emitter Sustaining Voltage 5 AMPERES VCEO(sus) = 25 Vdc (Min) @

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 mjd200rlg.pdf

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

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 mjd200g.pdf

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 0.4. Size:183K  onsemi
 mjd200t4g.pdf

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc