MJD200-1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD200-1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 65 MHz

Capacitancia de salida (Cc): 120 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO252

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MJD200-1 datasheet

 8.1. Size:236K  motorola
 mjd200re mjd210.pdf pdf_icon

MJD200-1

Order this document MOTOROLA by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 Complementary PNP Plastic Power Transistors MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Collector Emitter Sustaining Voltage 5 AMPERES VCEO(sus) = 25 Vdc (Min) @

 8.2. Size:48K  st
 mjd200 mjd210.pdf pdf_icon

MJD200-1

MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, DPAK audio amplifier applications. TO-252 Th

 8.3. Size:183K  onsemi
 mjd200rlg.pdf pdf_icon

MJD200-1

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.4. Size:183K  onsemi
 mjd200g.pdf pdf_icon

MJD200-1

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

MOSTRAR MÁS

Otros transistores... MJD122-1, MJD122T4, MJD127, MJD127-1, MJD127T4, MJD13003, MJD148, MJD200, MJE350, MJD210, MJD210-1, MJD210T4, MJD243, MJD243-1, MJD243T4, MJD2955, MJD2955-1