Биполярный транзистор MJD200-1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJD200-1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 12.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 65 MHz
Ёмкость коллекторного перехода (Cc): 120 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO252
MJD200-1 Datasheet (PDF)
mjd200re mjd210.pdf
Order this documentMOTOROLAby MJD200/DSEMICONDUCTOR TECHNICAL DATANPNMJD200ComplementaryPNPPlastic Power TransistorsMJD210NPN/PNP Silicon DPAK For Surface MountApplications. . . designed for low voltage, lowpower, highgain audio amplifier applications. SILICONPOWER TRANSISTORS CollectorEmitter Sustaining Voltage 5 AMPERESVCEO(sus) = 25 Vdc (Min) @
mjd200 mjd210.pdf
MJD200MJD210COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS1DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistordesigned for low voltage, low power, high gain,DPAKaudio amplifier applications.TO-252Th
mjd200rlg.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
mjd200g.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
njvmjd210 mjd200.pdf
MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix
mjd200 mjd210.pdf
Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For SurfaceMount ApplicationsMJD200 (NPN),MJD210 (PNP)www.onsemi.comDesigned for low voltage, low-power, high-gain audioamplifier applications.SILICONPOWER TRANSISTORSFeatures High DC Current Gain5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves25 VOLTS, 12.5 WATTS(No Suffix)
mjd200t4g.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
mjd200.pdf
isc Silicon NPN Power Transistor MJD200DESCRIPTIONDC Current Gain-: h = 70(Min) @ I = 0.5AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJD210Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low power audio amplifier and low-current,high-speed switching a
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050