MJD31CT4 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD31CT4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO252
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MJD31CT4 datasheet
mjd31ct4-a.pdf
MJD31CT4-A Low voltage NPN power transistor Datasheet - production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The dev
mjd31ct4g.pdf
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm
Otros transistores... MJD2955T4, MJD3055, MJD3055-1, MJD3055T4, MJD31, MJD31-1, MJD31C, MJD31C-1, C945, MJD31T4, MJD32, MJD32-1, MJD32C, MJD32C-1, MJD32CT4, MJD32T4, MJD340
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