All Transistors. MJD31CT4 Datasheet

 

MJD31CT4 Datasheet and Replacement


   Type Designator: MJD31CT4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO252
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MJD31CT4 Datasheet (PDF)

 0.1. Size:401K  st
 mjd31ct4-a.pdf pdf_icon

MJD31CT4

MJD31CT4-ALow voltage NPN power transistorDatasheet - production dataFeatures This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel3 Complementary to the PNP type MJD32C1ApplicationDPAK General purpose linear and switching TO-252equipmentDescriptionFigure 1. Internal schematic diagramThe dev

 0.2. Size:176K  onsemi
 mjd31ct4g.pdf pdf_icon

MJD31CT4

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl

 0.3. Size:135K  onsemi
 mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf pdf_icon

MJD31CT4

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 0.4. Size:132K  onsemi
 njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf pdf_icon

MJD31CT4

NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm

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Keywords - MJD31CT4 transistor datasheet

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