MJD41C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby MJD41C/DSEMICONDUCTOR TECHNICAL DATANPNMJD41C*Complementary PowerPNPMJD42C*TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS Straigh

MJD41CGeneral Purpose AmplifierLow Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP41 and TIP41C1.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise

MJD41C (NPN),MJD42C (PNP)Complementary PowerTransistorsDPAK for Surface Mount Applicationswww.onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves6 AMPERES(No Suffix)100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (1

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate TransistorsMJD41C TRANSISTOR (NPN)TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed 1.BASES witching Applications.2 Lead Formed for Surface Mount Applications in Plastic 2.COLLECTOR1Sleeves (No Suffix) 3 Straight Lead Version in Plastic Sleeves (1 Suffix)3.

MJD41C(NPN)TO-251/TO-252-2L Transistor TO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 FeaturesDesigned for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic TO-252-2LSleeves (No Suffix) Straight Lead Version in Plastic Sleeves (1 Suffix) Lead Formed Version in 16 mm Tape and Reel (T4

MJD41CNPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Designed for general purpose amplifier and low speedD-PAK(TO-252) switching applications.* Monolithic Construction With Builtin BaseEmitter Resistors.ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage 100 VVCEO100 VColl

isc Silicon NPN Power Transistors MJD41CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type MJD42CDPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and low sp

MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S

MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S

MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S