MJD41C - описание и поиск аналогов

 ..1. Size:195K  motorola
 mjd41c mjd42c.pdf 

Order this document MOTOROLA by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* Complementary Power PNP MJD42C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straigh

 ..2. Size:47K  fairchild semi
 mjd41c.pdf 

MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise

 ..3. Size:207K  onsemi
 mjd41c mjd42c.pdf 

 ..4. Size:1772K  jiangsu
 mjd41c.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD41C TRANSISTOR (NPN) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed 1.BASE S witching Applications. 2 Lead Formed for Surface Mount Applications in Plastic 2.COLLECTOR 1 Sleeves (No Suffix) 3 Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3.

 ..5. Size:230K  lge
 mjd41c.pdf 

MJD41C(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic TO-252-2L Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) Lead Formed Version in 16 mm Tape and Reel ( T4

 ..6. Size:565K  wietron
 mjd41c.pdf 

MJD41C NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Designed for general purpose amplifier and low speed D-PAK(TO-252) switching applications. * Monolithic Construction With Built in Base Emitter Resistors. ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage 100 V VCEO 100 V Coll

 ..7. Size:240K  inchange semiconductor
 mjd41c.pdf 

isc Silicon NPN Power Transistors MJD41C DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type MJD42C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low sp

 0.1. Size:173K  onsemi
 njvmjd41c njvmjd42c.pdf 

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 0.2. Size:173K  onsemi
 mjd41crlg.pdf 

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 0.3. Size:173K  onsemi
 mjd41ct4g.pdf 

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S