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MJD44H11 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD44H11
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 130 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO251
 

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MJD44H11 Datasheet (PDF)

 ..1. Size:192K  motorola
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MJD44H11

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 ..2. Size:395K  st
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MJD44H11

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

 ..3. Size:113K  fairchild semi
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MJD44H11

March 2009MJD44H11NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

 ..4. Size:236K  nxp
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MJD44H11

MJD44H1180 V, 8 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD45H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

Otros transistores... MJD350-1 , MJD350T4 , MJD41C , MJD41C-1 , MJD41CT4 , MJD42C , MJD42C-1 , MJD42CT4 , BC557 , MJD44H11-1 , MJD44H11T4 , MJD45H11 , MJD45H11-1 , MJD45H11T4 , MJD47 , MJD47-1 , MJD47T4 .

History: DTC043XUB | 2SC2144 | IMD9A | BLW37 | CZD882 | RN4988FS | MP3565

 

 
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