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MJD44H11 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD44H11
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 130 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO251
 

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MJD44H11 datasheet

 ..1. Size:192K  motorola
mjd44h11 mjd45h11.pdf pdf_icon

MJD44H11

Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS

 ..2. Size:395K  st
mjd44h11 mjd45h11.pdf pdf_icon

MJD44H11

MJD44H11, MJD45H11 Complementary power transistors Datasheet - production data . Features Low collector-emitter saturation voltage TAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications DPAK TO-252 Power amplifier Switching circuits Description Figure 1. Internal schematic diagram These d

 ..3. Size:113K  fairchild semi
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MJD44H11

March 2009 MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

 ..4. Size:236K  nxp
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MJD44H11

MJD44H11 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD45H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

Otros transistores... MJD350-1 , MJD350T4 , MJD41C , MJD41C-1 , MJD41CT4 , MJD42C , MJD42C-1 , MJD42CT4 , A1941 , MJD44H11-1 , MJD44H11T4 , MJD45H11 , MJD45H11-1 , MJD45H11T4 , MJD47 , MJD47-1 , MJD47T4 .

History: MJD47

 

 

 


 
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