MJD44H11. Аналоги и основные параметры

Наименование производителя: MJD44H11

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 50 MHz

Ёмкость коллекторного перехода (Cc): 130 pf

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO251

 Аналоги (замена) для MJD44H11

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MJD44H11 даташит

 ..1. Size:192K  motorola
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MJD44H11

Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS

 ..2. Size:395K  st
mjd44h11 mjd45h11.pdfpdf_icon

MJD44H11

MJD44H11, MJD45H11 Complementary power transistors Datasheet - production data . Features Low collector-emitter saturation voltage TAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications DPAK TO-252 Power amplifier Switching circuits Description Figure 1. Internal schematic diagram These d

 ..3. Size:113K  fairchild semi
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MJD44H11

March 2009 MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

 ..4. Size:236K  nxp
mjd44h11.pdfpdf_icon

MJD44H11

MJD44H11 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD45H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

Другие транзисторы: MJD350-1, MJD350T4, MJD41C, MJD41C-1, MJD41CT4, MJD42C, MJD42C-1, MJD42CT4, A1941, MJD44H11-1, MJD44H11T4, MJD45H11, MJD45H11-1, MJD45H11T4, MJD47, MJD47-1, MJD47T4