Справочник транзисторов. MJD44H11

 

Биполярный транзистор MJD44H11 Даташит. Аналоги


   Наименование производителя: MJD44H11
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 130 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO251
 

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MJD44H11 Datasheet (PDF)

 ..1. Size:192K  motorola
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MJD44H11

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 ..2. Size:395K  st
mjd44h11 mjd45h11.pdfpdf_icon

MJD44H11

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

 ..3. Size:113K  fairchild semi
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MJD44H11

March 2009MJD44H11NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

 ..4. Size:236K  nxp
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MJD44H11

MJD44H1180 V, 8 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD45H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

Другие транзисторы... MJD350-1 , MJD350T4 , MJD41C , MJD41C-1 , MJD41CT4 , MJD42C , MJD42C-1 , MJD42CT4 , BC557 , MJD44H11-1 , MJD44H11T4 , MJD45H11 , MJD45H11-1 , MJD45H11T4 , MJD47 , MJD47-1 , MJD47T4 .

History: 2SB382

 

 
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