MJD44H11T4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD44H11T4  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 130 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO252

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MJD44H11T4 datasheet

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MJD44H11T4

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche

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 mjd44h11t4-a.pdf pdf_icon

MJD44H11T4

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche

 0.3. Size:148K  onsemi
 mjd44h11t4g.pdf pdf_icon

MJD44H11T4

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

MOSTRAR MÁS

Otros transistores... MJD41C, MJD41C-1, MJD41CT4, MJD42C, MJD42C-1, MJD42CT4, MJD44H11, MJD44H11-1, 2N2222A, MJD45H11, MJD45H11-1, MJD45H11T4, MJD47, MJD47-1, MJD47T4, MJD50, MJD50-1