MJD50T4 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD50T4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MJD50T4
MJD50T4 datasheet
njvmjd47t4g njvmjd50t4g.pdf
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 1 AMPERE (No Suffix) 250, 400 VOLTS, 15 WAT
mjd50t4g.pdf
MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 1 AMPERE Electrically Similar to Popular
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 1 AMPERE (No Suffix) 250, 400 VOLTS, 15 WAT
Otros transistores... MJD45H11 , MJD45H11-1 , MJD45H11T4 , MJD47 , MJD47-1 , MJD47T4 , MJD50 , MJD50-1 , 2SC4793 , MJD5731 , MJD6036 , MJD6036-1 , MJD6036T4 , MJD6039 , MJD6039-1 , MJD6039T4 , MJE101 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n3416 | bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793



