MJD50T4 Specs and Replacement
Type Designator: MJD50T4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO252
MJD50T4 Substitution
- BJT ⓘ Cross-Reference Search
MJD50T4 datasheet
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 1 AMPERE (No Suffix) 250, 400 VOLTS, 15 WAT... See More ⇒
MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 1 AMPERE Electrically Similar to Popular... See More ⇒
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf 
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 1 AMPERE (No Suffix) 250, 400 VOLTS, 15 WAT... See More ⇒
Detailed specifications: MJD45H11 , MJD45H11-1 , MJD45H11T4 , MJD47 , MJD47-1 , MJD47T4 , MJD50 , MJD50-1 , 2SC4793 , MJD5731 , MJD6036 , MJD6036-1 , MJD6036T4 , MJD6039 , MJD6039-1 , MJD6039T4 , MJE101 .
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