MJD6036T4 Todos los transistores

 

MJD6036T4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD6036T4
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

MJD6036T4 Datasheet (PDF)

 7.1. Size:270K  motorola
 mjd6036r mjd6039.pdf pdf_icon

MJD6036T4

Order this documentMOTOROLAby MJD6036/DSEMICONDUCTOR TECHNICAL DATANPNMJD6036Complementary Darlington PNPMJD6039Power TransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, convertors, and power amplifiers.POWER TRANSISTORS Lead Formed for Su

 8.1. Size:178K  onsemi
 mjd6039t4g.pdf pdf_icon

MJD6036T4

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 8.2. Size:178K  onsemi
 njvmjd6039t4g.pdf pdf_icon

MJD6036T4

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 8.3. Size:199K  inchange semiconductor
 mjd6039.pdf pdf_icon

MJD6036T4

isc Silicon NPN Darlington Power Transistor MJD6039DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDX83C | BSS56 | 2SB1204

 

 
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